| http://www.w3.org/ns/prov#value | - In the present invention, as a gate electrode of a TFT, a laminated structure formed of a conductive film mainly containing Al (or a metal film) and a cap film formed over the conductive film is applied, and a reverse staggered TFT is formed by technique to crystallizing an amorphous semiconductor film using a catalytic element and technique to gettering a catalytic element after crystallizing the
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