| http://www.w3.org/ns/prov#value | - In this step, gate electrodes of MISFETs for peripheral circuits are formed in the peripheral circuit regions. [0169] The gate electrodes 7 (word lines WL) are formed by depositing a polycrystalline silicon film doped with n-type impurities such as P (phosphorus) maintaining a thickness of about 70 nm on the semiconductor substrate 1 by a CVD method, depositing thereon, by sputtering, a WN (tungst
|
