| http://www.w3.org/ns/prov#value | - In an ensuing step, a conductive layer 28, which may be made of a polysilicon, is formed on top of the patterned sacrificial layer 24 and the active matrix 10, as shown in FIG. 2C. [0008] Thereafter, the top-most portions of the conductive layer 28 are removed by a planarizing process such as a chemical mechanical polishing (CMP) or an anisotrophic etching until the sacrificial layer 24 is exposed
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