| http://www.w3.org/ns/prov#value | - nsulating diaphragm film which is made of an etching-resistant material and is formed on the main surface of said semiconductor substrate such as to cover the main surface, at least one strain gage which is provided at a predetermined position in a pressure receiving region of said diaphragm film, an insulating protective film which is made of an etching-resistant material and is formed on said st
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