| http://www.w3.org/ns/prov#value | - Another advantage of the present invention is a method of manufacturing a semiconductor device, the method comprising: forming a substrate comprising a layer of silicon (Si) having a strained lattice on a layer of silicon-germanium (Si???Ge); forming a transistor comprising source/drain regions and a gate electrode, having an upper surface and side surfaces, over the substrate with gate dielectric
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