| http://www.w3.org/ns/prov#value | - nd a drain region formed in the substrate and including a first, lightly doped portion adjacent to the gate region, and asecond, heavily doped portion within said first lightly doped portion, the process comprising: forming a low-resistance layer on said gate region of the drain-extension MOS transistor; forming a protective layer on said gate region and said firstlightly doped portion of the drai
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