| http://www.w3.org/ns/prov#value | - In a semiconductor light emitting device, such as a semiconductor laser or the like, a passivating layer deposited on a facet of said device to getter contaminants from said facet and comprising a thin layer of a reactive material, the thickness of said layer sufficiently thick to react with an optimum amount of said contaminants on said facet but sufficiently thin so as to be consumed in the gett
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