| http://www.w3.org/ns/prov#value | - An integration process in a SOI substrate of a semiconductor device including at least a dielectrically insulated well, the process comprising: an oxidizing step directed to form an oxide layer; a depositing step of a nitride layer onto said oxide layer; and a masking step, carried out onto said nitride layer using a resist layer and directed to define photolithographic openings for forming at lea
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