| http://www.w3.org/ns/prov#value | - ng gaps in its portions other than the convex portions by growing a second semiconductor layer from upper surfaces of the convex portions of the first semiconductor layer, the second semiconductor layer being expressed by a composition formula of AlxGayIn1???x???yN (wherein 0???x???1 and 0???y???1), wherein in the process (iii), the first semiconductor layer and the second semiconductor layer are
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