| http://www.w3.org/ns/prov#value | - In the above-mentioned embodiment, the p-type and n-type diamond semiconductor layers and the diamond insulator layers have been formed, not by the conventional plasma etching or ion beam etching methods but by a selective deposition technique in which a mask (e.g. a-Si) is formed on the areas other than the area in which a thin film of diamond is to be formed, and the thin film of diamond is dire
|
