| http://www.w3.org/ns/prov#value | - In one preferred embodiment of the present invention, the substrate is a conductive material, such as aluminum, the hole injecting layer is trigonal selenium, the hole transport layer is a halogen doped selenium arsenic alloy, containing 99.5 to 99.9 weight percent of selenium, 0.1 to 0.5 weight percent of arsenic, 50 parts per million to 100 parts per million of halogen, the charge generating lay
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