| http://www.w3.org/ns/prov#value | - In another aspect the invention provides a ferroelectric integrated circuit comprising: a semiconducting substrate; a transistor formed on the substrate, the transistor including a gate and a source/drain adjacent the gate; an insulating layer overlying the transistor gate and at least a portion of the substrate; a ferroelectric capacitor, the ferroelectric capacitor including a bottom electrode,
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