| http://www.w3.org/ns/prov#value | - In another zirconium-based approach, the zirconium silicon-oxynitride dielectric layer is formed by forming a zirconium silicide on the substrate, annealing the formed metal silicide in a non-oxidizing atmosphere including nitrogen, such as atomic nitrogen or NH3, and annealing the metal silicon-nitride layer in an oxidzing ambient, thereby forming a metal silicon-oxynitride layer on the substrate
|
