| http://www.w3.org/ns/prov#value | - 1050??? C. [0015] Another embodiment of the present invention is a method of forming a transistor having a conductive gate structure disposed on an ultra-thin gate dielectric layer, the method comprising the steps of: Providing a substrate having a semiconductor surface; providing an ultra-thin oxygen-containing dielectric layer, preferably SiO2 or an oxynitride, on the semiconductor surface; subj
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