| http://www.w3.org/ns/prov#value | - Another aspect of the present invention is a method for growing a thin single crystal material layer on a first substrate, transferring the thin single crystal layer to a non-crystalline substrate, having the steps: (a) growing a single crystal material layer on a first substrate, (b) implanting hydrogen (and/or helium) to a selected depth into the first substrate; (c) bonding the thin single crys
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