| http://www.w3.org/ns/prov#value | - In another example, the oxide semiconductor may have an at % ratio of Hf:In:Zn in the range of about 1:9 to 19:4.8 to 14.According to at least some example embodiments, the oxide semiconductor may further include one selected from the group consisting of or including elements of Groups I, II, III and IV and elements belonging to the lanthanide series.According to at least some example embodiments,
|
