| http://www.w3.org/ns/prov#value | - In yet another aspect, the present invention is a method of fabricating a semiconductor device on a substrate including providing a semiconductor substrate, forming at least one isolation structure in the substrate, forming a core well and an I/O well separated by the at least one isolation structure, forming a oxide layer on the I/O well, forming a poly layer on the I/O well oxide layer, forming
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