| http://www.w3.org/ns/prov#value | - In accordance with one aspect of the present invention, the above and other objects can be accomplished by the provision of a gallium nitride-based light emitting device comprising an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate, the light emitting device further comprising: an n-side electrode formed on one
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