| http://www.w3.org/ns/prov#value | - In yet another aspect, the present invention is a method including the operations of forming at least one isolation structure in a substrate, forming a core well and an I/O well separated by the at least one isolation structure, forming a oxide layer on the I/O well, forming a poly layer on the I/O well oxide layer, forming an I/O device gate structure from the poly layer and the oxide layer, form
|
