| http://www.w3.org/ns/prov#value | - In one embodiment, the present invention is a method of manufacturing a semiconductor device comprising the steps of performing a mask oxidation on a front side and a back side of a device wafer; implementing n+ photolithography on the front and back sides; performing n+ diffusion followed by drive-in oxidation on the front and back sides; forming a conduit from the back side to the front side, wh
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