| http://www.w3.org/ns/prov#value | - In FIGS. 9 and a substrate 16 of semi-conductive material such as silicon, germanium or the like has a PN junction 17 formed therein, wherein the resistance of the P-type layer 17a and that of the layer 18 formed by the reaction between the silicon oxide film and deoxidizing metal in accordance with the above described principles of the present invention are employed together as the resistor eleme
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