| http://www.w3.org/ns/prov#value | - n process using an inductively coupled plasma source having low dissociation and low minimum plasma voltageUS732073422 Aug 200322 Jan 2008Applied Materials, Inc.Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltageUS735917710 May 200515 Apr 2008Applied Materials, Inc.Dual bias frequency plasma reactor with feedback control of E.S.
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