| http://www.w3.org/ns/prov#value | - In this preferred embodiment, a silicon nitride film (composition Si=32%, O=59%, N=7%, H=2%) was formed to a thickness of 115 nm by plasma CVD. And in this preferred embodiment, the gate insulating film 508 was formed as a single layer; however, alternatively it may be a structure of two or more layers of film selected from insulating films consisting mainly of silicon or oxide films of metals suc
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