| http://www.w3.org/ns/prov#value | - In addition, as a difference in level of an underlayer directly below the contact hole, there is a difference in level between the thickness of the film of a control gate electrode material 106 constituting the memory cell transistor and the thickness of the film of a control gate electrode material 107 which is used as an etching mask for the electrode material of the control gate, so that it is
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