| http://www.w3.org/ns/prov#value | - In one preferred embodiment of the present invention, the substrate is a conductive material, such as aluminum, the electron trapping layer is a halogen doped selenium material, preferably chlorine doped selenium, containing from about 2,500 parts per million of chlorine to about 3,000 parts per million of chlorine, the hole transport layer is a halogen doped selenium arsenic alloy, wherein the am
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