| http://www.w3.org/ns/prov#value | - In order to solve the above problem, a method for producing a silicon epitaxial wafer according to an embodiment of the present invention is a method for producing a silicon epitaxial wafer by growing a silicon epitaxial layer by vapor phase growth on a main surface of a silicon wafer placed on a susceptor by using a vapor phase deposition apparatus comprising: a reaction chamber; the susceptor wh
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