| http://www.w3.org/ns/prov#value | - In the device shown in FIG. 3, when a high frequency current flows through a matching device 12 from a high frequency power source 13 to two series connected internal linear antennas 14, 15 in the interior of a plasma chamber 1, an induction field is generated around these internal linear antenna 14, 15, and is added to the process gas, such as reactive gas for etching or material gas for CVD, als
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