| http://www.w3.org/ns/prov#value | - nMethod of forming a semiconductor device with a conductor plug including five dielectric layers, the fourth dielectric layer forming sidewall spacersUS6333538 *Sep 2, 1999Dec 25, 2001Kabushiki Kaisha ToshibaCOB DRAM having contact extending over element-isolating filmUS6448618Aug 18, 2000Sep 10, 2002Kabushiki Kaisha ToshibaSemiconductor device and method for manufacturing the sameJPH1071734A Titl
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