| http://www.w3.org/ns/prov#value | - In another embodiment of the present invention, there is provided a method of manufacturing the phase change memory device, the method including the steps of: forming a first insulating interlayer, which has a first contact hole, on a semiconductor substrate; forming a contact plug recessed within the first contact hole; forming a catalyst layer on the contact plug in such a manner so as to fill t
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