| http://www.w3.org/ns/prov#value | - Without being bound by theory, it was found that an etch using a Br containing etchant at a low temperature, for example below 40??? C., provides an etch that is able to etch the phase change layer, which is preferably GST, providing vertical sidewall, defined as having sidewall profiles making an angle of between 87??? to 92??? with the bottom of the features from the bottom to the top of the sid
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