| http://www.w3.org/ns/prov#value | - It is important that the energy in this implantation is selected so that the location of the defects, which are introduced in the silicon in the very implantation step, does not pass down beyond the depth which is defined by the under surface or the bottom of the field oxide layer 18, i.e. the level where this layer ends, as seen in a downward direction from the surface of the plate.
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