| http://www.w3.org/ns/prov#value | - FIG. 15A is a diagram illustrating an exemplary fabrication method for formation of a contact hole in the nonvolatile semiconductor memory according to the second embodiment of the present invention, and particularly showing the steps of forming device isolation regions 28 in a semiconductor substrate 26, forming a thick interlayer insulator film 34, and then forming a large opening in a mask mate
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