| http://www.w3.org/ns/prov#value | - With reference to FIGS. 14A, 14B and 14C in which like features refer to like reference numerals in FIGS. 13A, 13B and 13C and at a subsequent fabrication stage, the fabrication of each memory gain cell 64 is completed by forming a read gate contact 66 from a deposited layer of an electrically conductive material, such as aluminum or tungsten, by a standard lithography and etch process at a locati
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