| http://www.w3.org/ns/prov#value | - Then, as shown in FIG. 7B, an n-type impurity such as phosphorus is ion-doped at a high concentration to the semiconductor layers 13 a to 13 c by using the resist patterns 17 a to 17 e and second conductive layers 19 a to 19 e as masks in order to form source and drain regions 20 to 25 and a capacitance electrode 26.
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