| http://www.w3.org/ns/prov#value | - iGe buffer layer of the semiconductor substrate, or provided on the SiGe buffer layer with another SiGe layer disposed therebetween. [0026] Furthermore, a method of forming a strained Si layer according to the present invention is a method of forming a strained Si layer on a Si substrate with a SiGe layer disposed therebetween, comprising a step for epitaxially growing a SiGe buffer layer on a Si
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