| http://www.w3.org/ns/prov#value | - ing Company, Ltd.Semiconductor device having a second level of metallization formed over a first level with minimal damage to the first level and methodUS8120114Dec 27, 2006Feb 21, 2012Intel CorporationTransistor having an etch stop layer including a metal compound that is selectively formed over a metal gateUS8399317Oct 14, 2011Mar 19, 2013Intel CorporationTransistor having an etch stop layer inc
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