| http://www.w3.org/ns/prov#value | - The insulating film covering the thin film transistors 744 to 748 is formed using a signle layer or a stacked layer made from an inorganic material such as silicon oxide or silicon nitride, an organic material such as polyimide, polyamide, benzocychlobutene, acrylic, epoxy, or siloxane, or the like, by an SOG method, a droplet discharing method, or the like.
|
