| http://www.w3.org/ns/prov#value | - Next, by the use of the photo resist layers 202 as a mask, the portion of the polycrystalline silicon film 108 other than the portions thereof which will be rendered into the control gates is completely removed by anisotropic etching until the ONO film 107 comes to be exposed; and thus, said first-mentioned portion is wholly removed.
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