| http://www.w3.org/ns/prov#value | - Alternatively, if, for example, the gate has a gate cap (i.e., a dielectric layer, for example, a silicon nitride layer, a silicon oxy-nitride layer, or other material layers having high etching selectivity to subsequently formed dielectric layers), then a thin SiO2 liner may be deposited followed by deposition of a polysilicon film to form the dummy spacers 105 and 115.
|
