About: http://webisa.webdatacommons.org/280717279

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	Thus, there is a problem that a parasitic capacitance becomes large since the gate electrode is formed at the bottoms of not only the channel but also the source/drain regions when the gate electrode layer is formed.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com