| http://www.w3.org/ns/prov#value | - The conductive layer used for the lower electrode 127 of the MIM capacitor and/or the first interconnection layer 129 may be formed of a metal such as copper (Cu), aluminum (Al), titanium (Ti), tantalum (Ta), titanium nitride (TiN), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), titanium silicon nitride (TiSiN), tungsten nitride (WN) or tungsten silicon nitride (WSiN).
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