| http://www.w3.org/ns/prov#value | - As the barrier layer, there can be used a TiN (titanium nitride) film in addition to WN film. [0170] Next, the photoresist film is removed, and the dry-etching residue and the photoresist residue remaining on the surface of the semiconductor substrate 1 are removed by using an etching solution such as hydrofluoric acid.
|
