| http://www.w3.org/ns/prov#value | - Then, a second polycrystalline silicon film 18 is formed over the entire surface of the work by a CVD process, a p-type impurity, such as boron, is introduced into the second polycrystalline silicon film 18 by ion implantation in a dose in the rage of 1??1014 to 1??1015 /cm2, and
|
