| http://www.w3.org/ns/prov#value | - The manufacturing method of a semiconductor device according to claim 1, wherein the metal layer is a film mainly containing an element selected from the group consisting of tungsten (W), titanium (Ti), molybdenum (Mo), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), and iridium (Ir).
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