PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • FIG. 1A is a cross section view of a MOSFET device showing a silicon substrate with a threshold voltage implant having a layer of gate oxide formed on the substrate surface and a layer of nitride formed on the gate oxide layer.
http://www.w3.org/ns/prov#wasQuotedFrom
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