| http://www.w3.org/ns/prov#value | - gate dielectrics and capacitors such as planar cells, trench cells (e.g., double sidewall trench capacitors), stacked cells (e.g., crown, V-cell, delta cell, multi-fingered, or cylindrical container stacked capacitors), as well as field effect transistor devices. [0059] A specific example of where a dielectric layer is formed according to the present invention is a capacitor construction.
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