| http://www.w3.org/ns/prov#value | - xidized film, the gate pattern, and the impurity ion implanted interface, and a dense position of implanted hydrogen ions, to which a predetermined concentration of hydrogen ions is implanted for a predetermined depth. [0400] According to this arrangement, the side of the single-crystal silicon substrate, where the oxidized film is formed, is bonded with a member such as the insulating substrate,
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