| http://www.w3.org/ns/prov#value | - In the region of the wafer surface where the barrier metal layers 3 are not occupied, the passivation layer 4 is deposited made of an electrically insulating material such as silicon nitride (Si3N4), silicon oxide (SiO2) or polyimide so as to cover the circuit pattern lines 2 and semiconductor elements not shown.
|
