| http://www.w3.org/ns/prov#value | - In the sputtering method, silicon oxide was used as the target, the substrate temperature during sputtering was between 200 and 400??? C., for example 350??? C., the sputtering atmosphere was a mixture of oxygen and argon, and the argon/oxygen ratio was between 0 and 0.5, for example less than 0.1
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