| http://www.w3.org/ns/prov#value | - In particular, the SiC or other wide bandgap semiconductor material based devices that will benefit greatly from the field termination techniques provided by the embodiments of the invention include, but are not limited to, p-i-n diodes, IGBTs, thyristors, transistors and in particular any semiconductor device that would use a JTE to increase the voltage blocked in reverse bias.
|
